Semiconductor memory device and semiconductor integrated circuit

ABSTRACT

In a semiconductor memory device, third and fourth transistors are configured as a vertical structure. The third transistor is laminated over a first transistor, and the fourth transistor is laminated over a second transistor, whereby a reduction in cell area is achieved. A voltage, which is set on the condition that the difference between a source potential applied to each of the first and second transistors and the potential of a select level of a word line becomes greater than or equal to a threshold voltage of each of the third and fourth transistors, is supplied to a source electrode of each of the first and second transistors, to thereby perform “0” write compensation.

BACKGROUND OF THE INVENTION

This is a divisional application of U.S. application Ser. No.10/722,461, filed Nov. 28, 2003, and now U.S. Pat. No. 7,110,283, theentire disclosure of which is hereby incorporated by reference.

The present invention relates to a semiconductor memory device and to atechnology that is effective when applied to a semiconductor memory inwhich static memory cells are arranged.

In a semiconductor memory device of the type used, for example, in asemiconductor integrated circuit, a latch circuit for storing andretaining data comprises n channel type MOS transistors and their loadelements. A signal input/output terminal of the latch circuit and itscorresponding bit line are connected via an access transistor. Theaccess transistor is normally configured as an n channel type MOStransistor. However, when an n channel type MOS transistor is used asthe access transistor, the cell current at the time of a read operationbecomes small according to the threshold voltage of the n channel typeMOS transistor, its operating speed becomes slow and the speed ofwriting of data on the high level side becomes slow. Therefore, it hasbeen proposed to use a semiconductor memory device wherein accesstransistors are configured as p channel MOS transistors (e.g., see thebelow-listed Patent Documents 1 and 2). In a circuit provided with pchannel MOS transistors serving as access transistors, the potential ofa storage node, which is stepped or pulled down by the correspondingaccess transistor, extends to a potential higher than ground potential(power supply VSS on the low potential side) by the threshold voltage ofthe access transistor. When this potential is higher than the reversethreshold voltage of a latch circuit, the writing of data (or itsrewriting) cannot be performed. Therefore, there is a known techniquewherein a terminal different from the terminal used for supply of anormal power supply potential GND on the low potential side is provided,and a potential higher by a predetermined level than the select level ofa word line is supplied to that terminal to thereby make it possible todetect low level data of each bit line by means of a latch circuit, evenif the potential of a storage node is reduced by the threshold voltageof the access transistor during a write operation, whereby the writingand rewriting of data can be reliably performed.

[Patent Document 1]

-   -   Japanese Unexamined Patent Publication No. Hei 9(1997)-231765

[Patent Document 2]

-   -   Japanese Unexamined Patent Publication No. Hei 4(1992)-168694

SUMMARY OF THE INVENTION

When a p channel type MOS transistor is used for each access transistorof a memory cell, a node potential remains upon writing of a logicalvalue “0”, so that the write operation becomes unstable. Thus, thesupply of a voltage higher by a predetermined level than the normalpower supply potential on the low potential side is effective, asindicated in the technology described in the Patent Document 1.According to the Patent Document 1, however, the cell area becomesrelatively large because the access transistor is formed in a bulklayer. As in a memory cell 1 shown in FIG. 1 of the Patent Document 1,for example, load resistors R11 and R12 can be omitted from a memorycell that is formed of four transistors Q11 through Q14 and two loadresistors R11 and R12. In such a circuit configuration, however, thecell read current and the leakage current are proportional to eachother, though the area of the memory cell becomes small, so that highspeed operation and a low leakage condition of the memory becomeincompatible. That is, when the threshold voltage is lowered and asufficient gate-to-source voltage Vgs is ensured for the purpose of highspeed operation, a large standby current flows. When the thresholdvoltage is made high and a drain-to-source voltage Vds is lowered inreverse, a small read current flows, and, hence a low speed operation isprovided.

An object of the present invention is to provide a technique forachieving a reduction in cell area and the appropriateness of writing alogical value “0”.

Another object of the present invention is to provide a technique forachieving a reduction in standby current and an increase in operatingspeed.

The above, other objects and novel features of the present inventionwill become apparent from the description provided in the presentSpecification and from the accompanying drawings.

Summaries of representative aspects of the invention disclosed in thepresent application will be described in brief as follows:

In accordance with the present invention, a semiconductor memory devicehas a first bit line for transferring data; a second bit line having arelationship of complementary potential levels with respect to the firstbit line; a storage section in which a drain electrode of a firsttransistor and a gate electrode of a second transistor are connected toeach other to form a first node, and a drain electrode of the secondtransistor and a gate electrode of the first transistor are connected toeach other to form a second node; a p channel type third transistor thatis capable of connecting the first node to the first bit line inaccordance with the voltage level of a word line; a p channel typefourth transistor that is capable of connecting the second node to thesecond bit line in accordance with the voltage level of the word line;and a power supply circuit that is capable of supplying a voltage, whichis set on the condition that a difference between a source potentialapplied to each of the first and second transistors and a potential of aselect level of the word line becomes greater than or equal to thethreshold voltage of each of the third and fourth transistors, to asource electrode of each of the first and second transistors, whereinthe third and fourth transistors are configured as a vertical structure,the third transistor is laminated over the first transistor, and thefourth transistor is laminated over the second transistor.

According to the above-described arrangement, the third and fourthtransistors are configured as a vertical structure, the third transistoris laminated over the first transistor, and the fourth transistor islaminated over the second transistor. This achieves a reduction in cellarea. The power supply circuit supplies the voltage, which is set on thecondition that the difference between the source potential applied toeach of the first and second transistors and the potential of the selectlevel of the word line becomes greater than or equal to the thresholdvoltage of each of the third and fourth transistors, to the sourceelectrode of each of the first and second transistors. Owing to this,“0” write compensation is carried out. This achieves the appropriatenessof writing a logical value “0”.

At this time, the potential of the select level of the word line can beset as a ground level. Further, the power supply circuit includes afifth transistor connected to the source electrodes of the first andsecond transistors and ground, and an error amplifier for determining adifference between a reference voltage supplied thereto and the sourcepotential applied to each of the first and second transistors forcontrolling the on resistance of the fifth transistor, based on thedifference.

A semiconductor memory device is configured which comprises a firstmemory cell area in which first memory cells are disposed in an array, asecond memory cell area in which second memory cells different instructure from the first memory cells are disposed in an array, and aperipheral circuit is shared between the first memory cell area and thesecond memory cell area. Each of the first memory cells comprises astorage section including an n channel type first MOS transistor and ann channel type second MOS transistor connected to each other, a pchannel type third MOS transistor that is capable of connecting a drainelectrode of the first MOS transistor and a gate electrode of the secondMOS transistor to a first bit line, and a p channel type fourth MOStransistor that is capable of connecting a drain electrode of the secondMOS transistor and a gate electrode of the first MOS transistor to thefirst bit line. The third and fourth MOS transistors can be configuredas a vertical structure, the third MOS transistor can be laminated overthe first MOS transistor, and the fourth MOS transistor can be laminatedover the second MOS transistor. Each of the second memory cells includesa storage section, in which a first inverter comprising a p channel typefifth MOS transistor and an n channel type sixth MOS transistor, bothconnected in series, and a second inverter comprising a p channel typeseventh MOS transistor and an n channel type eighth MOS transistor bothconnected in series, are connected in a loop form. The fifth and seventhMOS transistors are configured as a vertical structure, the fifth MOStransistor is laminated over the sixth MOS transistor, and the seventhMOS transistor is laminated over the eighth MOS transistor. Thus, areduction in cell area is achieved.

At this time, the array pitch between adjacent bit lines in the firstmemory cell array and the array pitch between adjacent bit lines in thesecond memory cell array are made equal to each other, to thereby makeit possible to share the bit lines between the first memory cell arrayand the second memory cell array.

When the bit line array pitches are different from each other betweenthe first memory cell array and the second memory cell array, a selectorfor selectively connecting the bit lines in the first and second memorycell arrays may preferably be interposed between the bit lines of thefirst memory cell array and the bit lines of the second memory cellarray.

There is a semiconductor memory device which includes a memory cellprovided at a point where a word line and bit lines intersect, a columnselection switch for selectively connecting the bit lines to a dataline, a bit line precharge circuit for precharging each of the bit linesto a predetermined level, and high voltage precharge means that iscapable of precharging the bit line selected by the column selectionswitch at a voltage of a level higher than a precharge voltage outputtedby the bit line precharge circuit.

According to the above arrangement, the high voltage precharge meansperforms precharge at the voltage of a level higher than the prechargevoltage produced by the bit line precharge circuit. This achieves areduction in a standby current and a speeding up of reading and writing.

In addition, the semiconductor memory device includes a write amplifierconnected to the bit lines via the column selection switch, which iscapable of writing data into the corresponding memory cell through thebit line selected by the column selection switch. The high voltageprecharge means can be contained in the write amplifier.

The memory device can comprise a storage section including an n channeltype first MOS transistor and an n channel type second MOS transistorconnected to each other, a p channel type third MOS transistor that iscapable of connecting a drain electrode of the first MOS transistor anda gate electrode of the second MOS transistor to a first bit line, and ap channel type fourth MOS transistor that is capable of connecting adrain electrode of the second MOS transistor and a gate electrode of thefirst MOS transistor to the first bit line. The third and fourth MOStransistors are configured as a vertical structure, the third MOStransistor is laminated over the first MOS transistor, and the fourthMOS transistor is laminated over the second MOS transistor, whereby areduction in cell area is achieved.

Also, the semiconductor memory device can include a power supply circuitthat is capable of supplying a voltage, which is set on the conditionthat a difference between a source potential applied to each of thefirst and second MOS transistors and a potential of a select level ofthe word line becomes greater than or equal to a threshold voltage ofeach of the third and fourth MOS transistors, to a source electrode ofeach of the first and second MOS transistors.

Further, each of the third and fourth MOS transistors can be set so asto retain data on the high level side in the storage section in a statein which a potential opposite in polarity to a potential for turning ona channel is being applied between a gate and source thereof. When thebit lines are boosted or stepped up, the potential of the correspondingword line is relatively reduced. Hence, only some of all of non-selectedmemory cells on the same bit line are placed in a selected state so thata large current is used up. However, if the data is retained in thestate in which a potential opposite in polarity to the potential forturning on the channel is being applied between the gate and source, asdescribed above, then the leakage current does not need to increase evenif the potential of each bit line rises.

The film thickness of each MOS transistor employed in a semiconductorintegrated circuit often is generally limited to two types. In order toform high-withstand MOS transistors for the internal circuit within itsrange, MOS transistors identical in type to high-withstand MOStransistors as used in an input/output circuit may preferably be used atspots where the voltage of the level higher than the precharge voltageoutputted by the precharge circuit is used.

BRIEF DESCRIPTION OF THE DRAWINGS

FIG. 1 is a block diagram showing a configurational example of aprincipal part of a mixed semiconductor memory device illustrated as oneexample of a semiconductor memory device according to the presentinvention;

FIG. 2 is a circuit diagram illustrating a configurational example of a6T cell included in the mixed semiconductor memory device;

FIG. 3 is a circuit diagram depicting a configurational example of a 4Tcell included in the mixed semiconductor memory device;

FIG. 4 is a cross-sectional view showing a principal part of the 4Tcell;

FIG. 5 is a layout plan view illustrating a bulk-configured cellintended for comparison with the 4T cell;

FIG. 6 is a diagram depicting the relationship between a hold state ofthe 4T cell and main node voltages at that time;

FIG. 7 is a diagram depicting the relationship between a write state ofthe 4T cell and main node voltages at that time;

FIG. 8 is a waveform diagram illustrating main operations during readingand writing operations of the 4T cell;

FIG. 9 is a diagram showing the relationship between various internalvoltages used in a memory cell array unit;

FIG. 10 is a block diagram showing a configurational example of asemiconductor integrated circuit including a semiconductor memory deviceaccording to the present invention;

FIG. 11 is a circuit diagram illustrating a detailed configurationalexample of an SRAM macro included in the semiconductor integratedcircuit shown in FIG. 10;

FIG. 12 is a diagram illustrating the relationship between a mainamplifier included in the SRAM macro and a cross-section of a transistorincluded therein;

FIG. 13 is a graph illustrating leakage currents of a transfer MOSincluded in the SRAM macro and drive MOSs included therein;

FIG. 14 is a graph illustrating ON current characteristics of the nchannel MOS transistors included in the SRAM macro; and

FIG. 15 is a waveform diagram showing operations of principal parts inthe SRAM macro.

DETAILED DESCRIPTION OF THE PREFERRED EMBODIMENTS

A mixed semiconductor memory device representing one example of asemiconductor memory device according to the present invention is shownin FIG. 1. Although the invention is not restricted in particular, themixed semiconductor memory device 10 shown in FIG. 1 is formed over onesemiconductor substrate, such as a monocrystal silicon substrate or thelike, by known semiconductor integrated circuit manufacturingtechnology.

Although the invention is not restricted in particular, the mixedsemiconductor memory device 10 includes a memory cell array unit 25,word drivers 20 and 21, a Y (column) selector 24, a main amplifier 11and a write amplifier 12.

The memory cell array unit 25 comprises including a plurality of wordlines, a plurality of bit lines respectively disposed so as to intersectthe word lines, and a plurality of memory cells respectively disposed atspots where the word lines and the bit lines intersect respectively. Thememory cell array unit 25 is formed with a 4T cell area 13, a 4T cellarea 14, a 4T cell area 15, a 6T cell area 16, a 6T cell area 17, a 6Tcell area 18 and a DRAM cell area 19. A plurality of the memory cellsformed by combinations of four transistors are respectively provided inthe 4T cell areas 13, 14 and 15 in an array form. A plurality of thememory cells respectively formed by combinations of six transistors arerespectively provided in the 6T cell areas 16, 17 and 18 in an arrayform. A plurality of dynamic memory cells are provided in the DRAM cellarea 19 in an array form.

A power supply wiring 26 is provided between the 4T cell areas 13 and 14and the 6T cell areas 17 and 18. A power supply wiring 27 is providedbetween the 4T cell area 15 and the 6T cell area 16. The memory cells(called “6T cells”) formed by the combinations of the six transistorsneed to be supplied with a power supply VDD on the high potential side,as distinct from the memory cells (called “4T cells”) formed by thecombinations of the four transistors. The supply of the power supply VDDon the high potential side to the 6T cells is performed via the powersupply wirings 26 and 27.

Since the 4T memory cell can be made smaller than the 6T memory cell inthe chip occupied area, the array pitch between the adjacent bit linescan also be narrowed correspondingly. A bit line array pitch in the 4Tcell area 14 is set to ½ of a bit line array bit in the 6T cell area 18.Therefore, a sense amplifier and ½ selector 22 is disposed between the4T cell area 14 and the 6T cell area 18. The bit lines in the 4T cellarea 14 and the bit lines in the 6T cell area 18 are respectivelyconnected in the form of 2:1. That is, one bit line in the 6T cell area18 is connected to the two bit lines in the 4T cell area 14 via the ½selector. The operation of the ½ selector can be controlled based on acolumn address signal. The sense amplifier in the sense amplifier and ½selector 22 amplifies a signal read from the 4T cell area 14 to a levelwritable into the 6T cell area 18 and amplifies a signal read from the6T cell area 18 to a level rewritable into the 4T cell area 14. Thesense amplifier in the sense amplifier and ½ selector 22 is connected tothe Y selector 24 on the 4T cell area 14 side, where a bit linecorresponding to a column address is selected. Incidentally,contrivances such as separation of the bit lines on the 4T cell area 14side from the sense amplifier, execution of writing into the 4T cellarea 14 side by pulse driving are effected after sense completion by thesense amplifier for the purpose of measures taken in the 4T cell area14.

The array pitch between the adjacent bit lines in the 4T cell area 13 ismade equal to that between the adjacent bit lines in the 6T cell area 17to thereby make common the bit lines in the 4T cell area 13 and the bitlines in the 6T cell area 17. They can be selected by the Y selector 24in accordance with column addresses.

The relationship between the 4T cell area 15 and the 6T cell area 16 isequal to the relationship between the 4T cell area 13 and the 6T cellarea 17. That is, the array pitch between the adjacent bit lines in the4T cell area 15 is made equal to that between the adjacent bit lines inthe 6T cell area 16, to thereby make common the bit lines in the 4T cellarea 15 and the bit lines in the 6T cell area 16. They can be selectedby the Y selector 24 in accordance with column addresses.

The word driver 21 is shared among the 4T cell areas 13, 14 and 15 andthe 6T cell areas 16, 17 and 18.

The word lines in the DRAM cell area 19 are respectively driven to aselect level by the dedicated word driver 20. Each of the dynamic memorycells connected to the intersecting points of the word lines and the bitlines is formed of one transistor and a charge storage capacitor. Thechip occupied area thereof is smaller than that of each of the memorycells in the 4T cell area 15 and the 6T cell area 16. Correspondingly,the array pitch between the adjacent bit lines in the DRAM cell area 19is made smaller than the bit line array pitches in the 4T cell area 15and the 6T cell area 16. Therefore, a sense amplifier and ½ selector 23is disposed between the DRAM cell area 19 and the 6T cell area 16 in amanner similar to one disposed between the 4T cell area 14 and the 6Tcell area 18, whereby the bit lines in the DRAM cell area 19 and the 6Tcell area 16 are connected in the ratio of 2:1. The operation of the ½selector in the sense amplifier and ½ selector 23 can be controlledbased on a column address signal.

A configurational example of a 6T cell 200, which is applicable to eachof the 6T cell areas 16, 17 and 18, is shown in FIG. 2.

A first inverter INV1 comprising a p channel type MOS transistor 201 andan n channel type MOS transistor 205, both connected in series, and asecond inverter INV2 comprising a p channel type MOS transistor 202 andan n channel type MOS transistor 206, both connected in series, areconnected in a loop form to form a storage section. Source electrodes ofthe p channel type MOS transistors 201 and 202 are connected to a powersupply VDD on the high potential side, and source electrodes of the nchannel type MOS transistors 205 and 206 are connected to a power supplyVSS on the low potential side. Although the invention is not restrictedin particular, the power supply VSS on the low potential side is equalto a ground GND line in the present semiconductor memory device. Thepotential thereof is set to 0 volt.

A point where the p channel type MOS transistor 201 and the n channeltype MOS transistor 205 are connected in series, is configured as afirst node N1 of the storage section. The first node N1 is connected toa bit line BLT via an n channel type MOS transistor 203. A point wherethe p channel type MOS transistor 202 and the n channel type MOStransistor 206 are connected in series is configured as a node N2 of thestorage section. The node N2 is connected to a bit line BLB via an nchannel type MOS transistor 204. The bit lines BLT and BLB are providedas a complementary bit line pair for transmitting signals ofcomplementary levels.

The n channel type MOS transistors 203 and 204 are operation-controlledby the potential of a word line WL. In the present example, when theword line WL is driven to a high level, the n channel type MOStransistors 203 and 204 are brought into conduction so that the firstnode N1 and the second node N2 of the storage section are respectivelyconnected to the bit lines BLT and BLB, thus making it possible to writedata into the storage section and read data from the storage section.

The p channel type MOS transistors 201 and 202 are configured as avertical structure. As will be described later, the p channel type MOStransistor 201 is laminated over the n channel type MOS transistor 205,and the p channel type MOS transistor 202 is laminated over the nchannel type MOS transistor 206, whereby a reduction in the area of thememory cell can be achieved.

While the 6T cell 200 shown in FIG. 2 has an advantage in that it isactivated at high speed in a complete static operation and is low incurrent consumption at standby, the number of constituent elements isincreased and the number of connections between the nodes is alsoincreased. Therefore, the size per cell becomes relatively large.

A configurational example of a 4T cell 300, which is applicable to eachof the 4T cell areas 13, 14 and 15, is shown in FIG. 3.

The n channel type MOS transistors 305 and 306 are also referred to asdrive MOSs, and they are connected to each other to constitute a storagesection. Source electrodes of the n channel type MOS transistors 305 and306 are connected to a power supply VSS on the low potential side. Apoint where a drain electrode of the n channel type MOS transistor 305and a gate electrode of the n channel type MOS transistor 306 areconnected to each other is configured as a first node N3 of the storagesection. The first node N3 is connected to a bit line BLT via a pchannel type MOS transistor 301. A point where a drain electrode of then channel type MOS transistor 306 and a gate electrode of the n channeltype MOS transistor 305 are connected to each other is configured as asecond node N4 of the storage section. The second node N4 is connectedto a bit line BLB via a p channel type MOS transistor 302.

The p channel type MOS transistors 301 and 302 are also referred to astransfer MOSs, and they are operation-controlled by the potential of aword line WL. In the present example, when the word line WL is driven toa low level, the p channel type MOS transistors 301 and 302 are broughtinto conduction so that the first node N3 and the second node N4 of thestorage section are connected to their corresponding bit lines BLT andBLB, thus making it possible to write data into the storage section andread data from the storage section.

The p channel type MOS transistors 301 and 302 are configured as avertical structure. As will be described later, the p channel type MOStransistor 301 is laminated over the n channel type MOS transistor 305,and the p channel type MOS transistor 302 is laminated over the nchannel type MOS transistor 306, whereby a reduction in the area of thememory cell can be achieved.

The 4T cell 300 shown in FIG. 3 holds a high level attributable toleakage of the p channel type MOS transistors 301 and 302. Since thenumber of constituent elements is small and the number of nodes is alsosmall as compared with the configuration shown in FIG. 2, the size percell is relatively small, but a trade-off relation is establishedbetween the standby current and the operating speed of the 4T cell. Whena reduction in the standby current is effected, for example, theoperating speed is reduced correspondingly.

A layout of a bulk 4T cell intended for comparison with the 4T cell 300is shown in FIG. 5. Since four transistors are constituted as bulks, thebulk 4T cell needs to provide spaces corresponding to the four MOStransistors for their underbeds or underlying bases. Since the p channeltype MOS transistors and the n channel type MOS transistors exist, wellseparation is required. For the purpose of wiring between a p channelregion and an n channel region, all wiring must go through an upperlayer. At this time, contact holes (LCONT and LCONT2) for connectingdiffusion layers and wiring layers are needed.

A cross-section of a principal part of the 4T cell 300 is shown in FIG.4. Incidentally, points designated at {circle around (1)}, {circlearound (2)} and {circle around (3)} in FIGS. 3 and 4 are provided tofacilitate a corresponding identification of the electrodes of the maintransistors.

Since the vertical structure-type p channel type MOS transistors 301 and302 are provided in a form where they are laminated over the n channeltype MOS transistors 305 and 306, spaces corresponding to the two MOStransistors are sufficient for underbeds or underlying bases. Since thep channel type MOS transistors 301 and 302 are of the SOI type, wellseparation is not necessary. Since they themselves share contactsbecause of the vertical structure, there is no need to provide contactholes essential to the bulk constitution.

Since the p channel type MOS transistors are used for transfer MOSs (301and 302) in the 4T cell 300, a high level in the cell is raised to thepotential of each bit line upon data writing. However, a low levelenables writing only up to VSS-Vth. Here, Vth is defined as thethreshold voltage of each of the transfer MOSs (301 and 302). Therefore,“0” write compensation is performed in the following manner.

FIG. 6 shows the relationship between a hold state of the 4T cell 300and main node voltages at that time.

The leakage of the p channel type MOS transistor 301 or 302 compensatesfor a voltage drop developed by leakage at the time of the turning offof the n channel type MOS transistor at the node N3 or N4 that isbrought to a high level (logical value “1”). Therefore, the p channeltype MOS transistor 301 or 302 is controlled to a very shallow on state(Vgs=α). Thus, the same current as described above flows even into thenode N3 or N4 that is brought to a low level (logical value “0”). Atthis time, however, it flows into the low-potential power supply VSSside via the n channel MOS transistor 305 or 306 that is placed in an onstate. A node Vssm potential (+β) in the hold state is generated usingthe above current and is used as a “0” write compensation potential.

FIG. 7 shows the relationship between a write state of the 4T cell 300and main node voltages at that time.

Upon writing, the word line WL is brought to a low level (=VSS), so thatthe p channel type MOS transistors 301 and 302 are brought intoconduction. Since the bit line BLT is high in level (=VDD), they areoperated in a common-source configuration, with the level of the powersupply VDD on the high potential side serving as a reference. However,since the potential ratio of the above transistor to the n channel typeMOS transistor 305 is taken, the node N3 simply rises to about ⅓ whenkept intact. Since the driving of the n channel type MOS transistor 305becomes weak as the potential of the node N4 side decreases, itgradually rises and finally reaches the power supply VDD level on thehigh potential side. Since the node N4 side is initially brought to thepower supply VDD level in reverse, the common-source configuration istaken. Further, the potential of the node N4 side drops rapidly becauseof the no load MOS transistor. However, as the potential of the node N4side gradually approaches the Vssm level, the gate-to-source voltage Vgsis reduced, so that a source-follower operation is taken. Finally,Vgs=Vssm−Vss is achieved. Here, the level of Vssm is determined so thatVgs reaches a level greater than or equal to the threshold voltage ofeach of the p channel type MOS transistors 301 and 302. Consequently,“0” write compensation is carried out. Incidentally, even if a slightvoltage remains at each node in some cases, any of the nodes comes tothe Vssm level by the leakage of the p channel type MOS transistor 301or 302.

FIG. 8 shows main operational waveforms at the time of reading andwriting of the 4T cell 300.

In the case of a selected cell, the word line WI is driven to a lowlevel.

During a read period, the word line WL is reduced to a power supply VSSlevel on the low potential side so that signals at the nodes N3 and N4are read into the bit lines BLT/BLB. During a write period, the wordline WL is reduced to the power supply VSS level, so that write data istransferred to each of the nodes N3 and N4. At this time, the low levelof each bit line is made higher, by the threshold voltage of eachtransfer MOS than the select level (power supply VSS level on the lowpotential side) of the word line WL, whereby “0” write compensation isperformed.

Various internal voltages used in the memory cell array unit 25 areshown in FIG. 9.

A high level of each bit line is set to 1.7V, and a low level of eachbit line is set to 0V (=VSS). A high level (non-select level) of a wordline is set to 1.2V, and a low level (select level) of the word line isset to 0V (=VSS). A Vssm level (cell VSS) of the 4T cell 300 is set to0.3V in consideration of “0” write compensation. This is determined insuch a manner that Vgs becomes greater than or equal to the thresholdvoltage of each of the p channel type MOS transistors 301 and 302 whenVgs=Vssm−Vss. Such various voltages are obtained by stepping down avoltage supplied from outside in the following manner.

That is, a power supply voltage 1.5V (VDD) supplied from outside isstepped down by a step-down circuit 91 to thereby generate an internal1.2V voltage to be supplied to each of the peripheral circuits. Thepower supply voltage 1.5V (VDD) that is supplied from the outside isstepped down by a step-down circuit 92 to thereby generate 1.2Vcorresponding to the high level of the word line WL. Since the generated1.2V stabilizes a retention or hold characteristic, trimming andtemperature compensation have been made. This voltage is stabilized by aparasitic capacitor C1 at a non-selected word line.

Cell VDD=0.3V is stabilized by a constant voltage circuit 93 and aparasitic capacitor C2 in a memory cell array. The constant voltagecircuit 93 is connected to the source electrodes of the n channel MOStransistors 305 and 306 in the 4T cell 300 and the power supply VSS onthe low potential side, and serves as variable impedance means withrespect to a cell current. Although the invention is not restricted inparticular, the constant voltage circuit 93 comprises an n channel typeMOS transistor 933 connected to the source electrodes of the n channelMOS transistors 305 and 306 in the 4T cell 300 and the power supply VSSon the low potential side, a reference voltage generator 931 forgenerating a reference voltage Vref, based on the power supply voltage1.5V (VDD) supplied from the outside, and an error amplifier 932 fordetermining the difference between the reference voltage Vref generatedby the reference voltage generator 931 and the cell VSS and forcontrolling the on resistance of the n channel type MOS transistor 933,based on the difference. The reference voltage generator 931 stabilizesthe reference voltage Vref according to trimming and temperaturecompensation. That is, the reference voltage generator 931 is providedwith a stable reference voltage source such as a bandgap reference, afuse circuit capable of trimming upon testing, and a pseudo or dummytrimming circuit. Variations between lots of p channel type MOStransistors are corrected by the trimming function to thereby make itpossible to achieve an improvement in yield. Owing to the dummy trimmingfunction, the voltage level is changed according to a test commandwithout causing a fuse to blow, thereby attempting to facilitate a writemargin test.

According to the above example, the following operation and effects canbe obtained.

(1) In general, the density of a memory cell is reduced in the order ofthe DRAM cell area, 4T cell area and 6T cell area. A random access speedis lowered in the order of the 6T cell area, 4T cell area and DRAM cellarea. Thus, preferably, data that is large in amount and in which theaccess speed is not so greatly emphasized is stored in the DRAM area 19,and data that is high in use frequency and in need of high-speed accessis stored in each of the 6T cell areas 16, 17, 18 and 4T cell areas 13,14 and 15. The cell areas are used properly according to the demands forthe access speed, the use frequency, etc. in this way to thereby obtainthe maximum performance. Since the bit line is brought into conductionbetween the different cell areas, a copying of each of the stored datacan be performed at high speed via the bit line. When, for example, thedata stored in the 6T cell areas 16, 17 and 18 are transferred to the 4Tcell areas 13, 14 and 15, respectively, high-speed data transfer isenabled using the bit lines that have been brought into conduction.

(2) Since the cell VDD=0.3V is formed to perform “0” write compensation,writing exceeding the limit of VSS-Vth is enabled upon writing of thelow level. Also, the cell VDD=0.3V is stabilized by the constant voltagecircuit 93, and the parasitic capacitor C2 in the memory cell array. Theconstant voltage circuit 93 is connected to the source electrodes of then channel type MOS transistors 305 and 306 in the 4T cell 300, and thepower supply VSS on the low potential side, and it serves as a variableimpedance means with respect to the cell current. The constant voltagecircuit 93 comprises the n channel type MOS transistor 933 that isconnected to the source electrodes of the n channel MOS transistors 305and 306 in the 4T cell 300 and the power supply VSS on the low potentialside, the reference voltage generator 931 for generating the referencevoltage Vref, based on the power supply voltage 1.5V VDD that issupplied from the outside, and the error amplifier 932 for determiningthe difference between the reference voltage Vref that is generated bythe reference voltage generator 931 and the cell VSS and for controllingthe on resistance of the n channel type MOS transistor 933, based on thedifference, whereby the stabilization of the cell VDD=0.3V is achieved.

(3) Since the p channel MOS transistors 301 and 302 of verticalstructure are applied to the transfer MOSs, and the p channel type MOStransistors 301 and 302 of vertical structure are provided in a formwhere they are heaped up over the n channel type MOS transistors 305 and306, the spaces corresponding to the two MOS transistors are sufficientfor the underlying bases. Since the p channel type MOS transistors 301and 302 are of the SOI type, the well separation is not necessary. Sincethey themselves share contacts because of the vertical structure, thereis no need to provide contact holes essential to the bulk constitution.From this point of view, the scaling down of the memory cell can beachieved.

A configurational example of a semiconductor integrated circuitincluding a semiconductor memory device according to the presentinvention is shown in FIG. 10.

Although the invention is not restricted in particular, thesemiconductor integrated circuit 100 shown in FIG. 10 includes an inputcircuit 101, a level shifter 102, an internal logic 103, a level shifter104, an output circuit 105, a step-down power supply circuit 106 and anSRAM macro 107, and it is formed over one semiconductor substrate, suchas a monocrystal silicon substrate, by known semiconductor integratedcircuit manufacturing technology. The input circuit 101 has the functionof fetching or taking in a signal inputted via an input terminal. Thelevel shifter 101 has the function of shifting a signal of a powersupply VDD system (high voltage) on the high potential side, which isinputted via the input circuit 101, to a Vperi system (low voltage). Theinternal logic 103 is of a Vperi system and includes a centralprocessing unit for effecting a predetermined logical operating processon the input signal, and peripheral circuits thereof. Upon the logicaloperation of the internal logic 103, the SRAM macro 107 is accessed andinformation stored therein is used as needed. The level shifter 104 hasthe function of shifting a signal (Vperi system) outputted from theinternal logic 103 to the power supply VDD system on the high potentialside. The output circuit 105 has the function of outputting a signaloutputted from the level shifter 104 from an output terminal.

The step-down power supply circuit 106 steps down the supplied powersupply VDD on the high potential side to thereby generate a voltageVperi that is lower than the VDD level. The generated voltage Vperi issupplied to the level shifter 102, the internal logic 103, the levelshifter 104 and the SRAM macro 107.

Although the invention is not restricted in particular, the SRAM macro107 includes a Y (column) decoder 108, a main amplifier and writeamplifier 109, a column selection circuit 110, an SRAM mat 111, a VSSMgenerator 112, a VWL generator 113 and a word line driver 114.

A configurational example of a principal part of the SRAM macro 107 isshown in FIG. 11.

The SRAM mat 111 includes a plurality of word lines, a plurality of bitlines provided so as to intersect the word lines, and a plurality of 4Tcells respectively provided at points where the word lines and the bitlines intersect. Those each having the same configuration as the oneshown in FIG. 3 are basically applied to the 4T cells. That is, nchannel type MOS transistors 305 and 306 are connected to constitute astorage section. Source electrodes of the n channel type MOS transistors305 and 306 are connected to a power supply Vssm on the low potentialside. A point where a drain electrode of the n channel type MOStransistor 305 and a gate electrode of the n channel type MOS transistor306 are connected to each other is configured as a first node N3 of thestorage section. The first node N3 is connected to a bit line BLT via ap channel type MOS transistor 301. A point where a drain electrode ofthe n channel type MOS transistor 306 and a gate electrode of the nchannel type MOS transistor 305 are connected to each other isconfigured as a second node N4 of the storage section. The second nodeN4 is connected to a bit line BLB via a p channel type MOS transistor302.

The p channel type MOS transistors 301 and 302 are operation-controlledby the potential of a word line WL. In the present example, when theword line WL is driven to a low level, the p channel type MOStransistors 301 and 302 are brought into conduction so that the firstnode N3 and the second node N4 of the storage section are respectivelyconnected to the bit lines BLT and BLB, thus making it possible to writedata into the storage section and read data from the storage section.

The p channel type MOS transistors 301 and 302 are configured as avertical structure, such as shown in FIG. 4. The p channel type MOStransistor 301 is laminated over the n channel type MOS transistor 305,and the p channel type MOS transistor 302 is laminated over the nchannel type MOS transistor 306, whereby a reduction in the area of thememory cell can be achieved.

The VSSM generator 112 is configured in a manner similar to the constantvoltage circuit 93 shown in FIG. 9 by way of example, and it performs“0” write compensation.

The plurality of word lines WL are selectively driven by a word linedriver (WLD) 120. The word line driver 120 decodes an input X (row)address signal and drives one corresponding to the X address from theplurality of word lines WL to a select level, based on the result ofdecoding. In the present example, since the p channel type MOStransistors 301 and 302 are applied as transfer MOSs in the 4T cell 300,the select level of the word line WL is brought to a low level, which isequal to a power supply VSS level on the low potential side.

A VWL generator 121 controls the drive potential level of each wordline, based on the ratio between leakage currents of a p channel MOStransistor and an n channel type MOS transistor.

The complementary bit lines BLT and BLB are selectively connected to themain amplifier and write amplifier 109 via the column selection circuit110. The main amplifier and write amplifier 109 include a main amplifierMA for amplifying a signal transmitted through the column selectioncircuit 110 and a write amplifier MA for supplying write data to the bitlines BLT and BLB through the column selection circuit 110.

The column selection circuit 110 is configured as follows:

A p channel type MOS transistor 135 and an n channel type MOS transistor136 are connected in parallel to form a column switch. The bit line BLTis connected to the main amplifier MA and the write amplifier WA throughthe column switch. A p channel type MOS transistor 137 and an n channeltype MOS transistor 138 are connected in parallel to form a columnswitch. The bit line BLB is connected to the main amplifier MA and thewrite amplifier WA through the column switch. There is further provideda precharge circuit for precharging each of the bit lines BLT and BLB toa predetermined voltage level. The precharge circuit comprises a pchannel type MOS transistor 132 connected to the bit line BLT and a pchannel type MOS transistor 133 connected to the bit line BLB, both ofwhich are connected in series. A node where the p channel type MOStransistors 132 and 133 are connected in series is supplied with aprecharge voltage VbHold of a predetermined level. A column selectsignal Ys is transferred to gate electrodes of the p channel type MOStransistors 132 and 133. When the column select signal Ys is asserted ata low level, the p channel type MOS transistors 132 and 133 are broughtinto conduction so that the bit lines BLT and BLB are precharged by theprecharge voltage VbHold. A p channel type MOS transistor 131 forequalization is provided so as to short-circuit the bit lines BLT andBLB. When the column select signal Ys is asserted at a low level so thatthe bit lines BLT and BLB are supplied with the precharge voltageVbHold, the p channel type MOS transistor 131 for equalization isbrought into conduction so that the bit lines BLT and BLB are made equalto each other in precharge level.

The main amplifier MA comprises p channel type MOS transistors 139 and140, and n channel type MOS transistors 141, 142, 143, 144 and 145, allof which are connected to one another. A series-connected circuit of theMOS transistors 139, 141 and 143 and a series-connected circuit of theMOS transistors 140, 142 and 144 are connected in a loop form to form alatch circuit.

Source electrodes of the p channel type MOS transistors 139 and 140 aresupplied with a voltage Vperi. Source electrodes of the n channel typeMOS transistors 143 and 144 are connected to the power supply VSS on thelow potential side through the n channel type MOS transistor 145. A mainamplifier enable signal MAE is transferred to a gate electrode of the nchannel type MOS transistor 145. When the main amplifier enable signalMAE is asserted at a high level so that the n channel type MOStransistor 145 is brought into conduction, the main amplifier MA isbrought to an enable or operable state.

The main amplifier WA comprises p channel type MOS transistors 146, 148and 150, and n channel type MOS transistors 147 and 149, all of whichare connected to one another. The p channel type MOS transistor 146 andthe n channel type MOS transistor 147 are connected in series. A pointwhere they are connected in series, is configured as a node IT, which isconnected to the bit line BLT via the MOS transistors 135 and 136 of thecolumn selection circuit 110. The p channel type MOS transistor 148 andthe n channel type MOS transistor 149 are connected in series. A pointwhere they are connected in series, is configured as a node IB, which isconnected to the bit line BLB via the MOS transistors 137 and 138 of thecolumn selection circuit 110. A gate electrode of the p channel MOStransistor 146 is supplied with a step-up control ITUB for the node IT.When the step-up control signal ITUB is asserted at a low level, the pchannel type MOS transistor 146 is brought into conduction, so that ahigh voltage based on a power supply VDD on the high potential side issupplied to the node IT. A gate electrode of the p channel MOStransistor 148 is supplied with a step-up control signal IBUB for thenode IB. When the step-up control signal IBUB is asserted at a lowlevel, the p channel type MOS transistor 148 is brought into conductionso that a high voltage based on the power supply VDD on the highpotential side is supplied to the node IB.

Source electrodes of the n channel type MOS transistors 147 and 149 areconnected to the power supply VDSS on the low potential side. Gateelectrodes of the n channel type MOS transistors 147 and 149 aresupplied with write data ITD and IBD. The operations of the n channeltype MOS transistors 147 and 149 are controlled in accordance with thewrite data ITD and IBD to enable data writing.

Further, a p channel type MOS transistor 150 is provided so as toshort-circuit the nodes IT and IB. The nodes IT and IB are equalized inaccordance with an equalize control signal IEQB transferred to a gateelectrode of the p channel type MOS transistor 150.

Here, a cell read current and a leakage current are proportional to eachother in the 4T cell 300. This means that a high speed operation and alow leakage are incompatible. That is, when the threshold voltage islowered for the high speed operation to ensure a sufficientgate-to-source voltage Vgs, a large standby current flows. When thethreshold voltage is made high to lower the drain-to-source voltage Vdsin reverse, a small read current flows so that a low speed operation isenabled.

Although the cell VSS is raised in a standby mode to achieve a reductionin leakage current, there is a need to set each mode, and a frequentstandby cannot be performed.

Thus, the SRAM macro 107 shown in FIG. 10 makes use of MOS transistors(thick film elements) that are high in threshold voltage. Then, Vb1 islowered during a period other than reading to produce a low leakagestate, and a bit line selected by a column selection system (Ys) isboosted or stepped up upon reading, thereby enabling a reduction incurrent consumption and high-speed reading of data.

That is, thick film elements (high-withstand MOS transistors) areapplied to all the MOS transistors constituting the 4T cell 300, all theMOS transistors constituting the column selection circuit 110, all theMOS transistors constituting the write amplifier WA, and the MOStransistors 141 and 142 in the main amplifier MA, whereby theirthreshold voltages are set high, where a bit line precharge voltageVb1Hold is set low.

FIG. 12 typically shows a cross-sectional structure of a principal partof the main amplifier MA.

The main amplifier MA is configured as a portion where the VDD system isswitched to the Vperi system. Only the n channel type MOS transistors141 and 142 are configured as thick film elements, and the other MOStransistors are configured as thin film elements. The thickness of theoxide film of the gate of each thick film element is made to be thickerthan that of the gate oxide film of the other MOS transistor, e.g., thethin film MOS transistor 143.

Using such thick film elements enables a reduction in standby current.

However, since only a small read current is obtained upon reading datafrom the 4T cell 300 if kept intact, time is taken to read the data.Therefore, in the present example, high voltage (power supply VDD on thehigh potential side) is supplied to the bit lines BLT, BLB each selectedin accordance with the column select signal Ys through the nodes IT andIB to thereby raise the precharge levels of the bit lines. Consequently,the data can be read at high speed from the 4T cell 300. Even uponwriting of data into the 4T cell 300, high voltage (power supply VDD onthe high potential side) is supplied to the bit lines BLT and BLB viathe nodes IT and IB in the same manner as described above, whereby theprecharge levels of the bit lines are raised to achieve the speeding upof writing.

In the present example, as described above, high voltage (power supplyVDD on the high potential side) is supplied via the nodes IT and IB toraise the precharge levels of the bit lines, whereby the reading of datafrom the 4T cell 300 at high speed is enabled. Thus, high-withstand MOStransistors are used at points where a voltage that is higher than theprecharge voltage is supplied. In the configurational example shown inFIG. 11 by way of example, all the MOS transistors constituting the 4Tcell 300, all the MOS transistors constituting the column selectioncircuit 110, all the MOS transistors constituting the write amplifierWA, and the MOS transistors 141 and 142 of the main amplifier MA areconfigured as high-withstand MOS transistors. At this time, onesidentical in type to the high-withstand MOS transistors used in theinput circuit 101 and output circuit 105 shown in FIG. 10 are used forthe high-withstand MOS transistors used in the internal circuit. This isbecause the film thickness of each MOS transistor employed in asemiconductor integrated circuit is generally often limited to twotypes, and the high-withstand MOS transistors of the internal circuitcan be formed within its range.

The leakage current characteristics of transfer MOSs (p channel type MOStransistors 301 and 302) and drive MOSs (n channel type MOS transistors305 and 306) are shown in FIG. 13. The horizontal axis indicates agate-to-source voltage of each MOS transistor, and the vertical axisindicates a drain-source current of each MOS transistor. Thecharacteristic curves indicated by solid lines correspond to the casewhere the potential of each bit line BL=1.5V, whereas the characteristiccurves indicated by broken lines correspond to the case where thepotential of each bit line BL=2.0V. The ON current characteristics areillustrated in FIG. 14.

A potential opposite in polarity to a potential for turning on a channelis applied between the gate and source to increase leakage current. Thisis known as the GIDL (Gate Induced Drain Leakage) characteristic. In thepresent example, such a GIDL characteristic is used to retain or holddata. Incidentally, the GIDL characteristic of the MOS transistor hasbeen described in, for example, “Ja-Hao, Chen, Shyh-Chyi Wong, andYeong-Her Wang “An Analytic Three-Terminal Band-to-Band Tunneling Modelon GIDL in MOSFET” IEEE TRANSACTIONS ON ELECTRON, VOL. 48, 7, JULY2001”.

Referring to FIG. 13, since the potential of the bit line BL=2.0V uponreading, a gate-to-source voltage Vgs of each transfer MOS results in−0.1V. Thus, the transfer MOS is held ON very weakly by the GIDLcharacteristic, and, hence the leakage current increases slighter morethan usual. With the use of this mode, the restoration of eachnon-selected cell can be speeded up.

The retention of data is performed in a GIDL region of a p channel typeMOS transistor. That is, each of the transistors is set so as to hold orretain data on the high level side in the storage section in a state inwhich a potential that is opposite in polarity to the potential forturning on the channel is being applied between the gate and source.This results for the following reasons.

That is, when the bit lines are boosted or stepped up, the potential ofthe corresponding word line is relatively reduced. Only some of all thenon-selected memory cells on the same bit line are placed in a selectedstate so that a large current is used up. However, if a high level ofdata is retained using the GIDL region of the p channel type MOStransistor, then the leakage current need not increase, even if thepotential of each bit line rises.

Thus, in the present example, the potential BL of the bit line is +0.4V(1.5V+0.4V=1.9V) and the gate-to-source voltage Vgs is given as areverse bias of 0.4V at idle. Therefore, the word line WL retains a highlevel by use of the GIDL region. An off leakage current of each driveMOS (corresponding to each of n channel type MOS transistors 305 and306) results in 10⁻¹³[A] if BL=1.5V. This current results in 1/50 ascompared with 5×10⁻¹² at BL=2.0V of a read voltage.

Since the standby current is set to 50 to 100 times the leakage currentof the drive MOS, the standby current can be brought to 10⁻¹³×100=10⁻¹¹when BL=1.5V, and 1/20 of 2×10⁻¹²×100=2×10⁻¹⁰ when BL=2.0V. When BL=2.0Vis set, 4.0 mA is obtained with respect to 1.1 mA at BL=1.5V uponreading, so that an increase (speeding up) of 3.6 times is enabled.

The operational waveforms of principal parts of the SRAM macro 107 shownin FIG. 11 are illustrated in FIG. 15. The hold periods, read periodsand write periods are shown in the present example.

During the hold period, the bit lines are precharged by a low bit lineprecharge voltage Vb1Hold to thereby reduce the cell leakage current.

During the read period, the power supply VDD on the high potential sideis applied to the main amplifier MA and the write amplifier WA.Therefore, the potentials of the bit lines BLT and BLB selected by thecolumn selection circuit 110 rise, and, correspondingly the drivingforce of the memory cell increases. After the completion of reading, thebit lines BLT and BLB are respectively brought to a high potential levelso that cell restoration is performed.

When the bit lines BLT and BLB are respectively brought to anon-selected state during a hold period that is set immediately afterthe read period, the bit lines BLB/BLT are slowly restored to theoriginal voltage level of Vb1Hold.

Next, during a write period, the power supply VDD on the high potentialside is applied to the main amplifier MA and the write amplifier WA in amanner similar to the read period. Therefore, the potentials of the bitlines BLT and BLB selected by the column selection circuit 110 rise,and, correspondingly, the driving force of the memory cell increases.After the completion of reading, the potentials of the bit lines BLT andBLB are made equal to the high potential, so that cell restoration iseffected.

According to the above example, the following operation and effects canbe obtained.

That is, the thick film elements are applied to all the MOS transistorsconstituting the 4T cell 300, all the MOS transistors constituting thecolumn selection circuit 110, all the MOS transistors constituting thewrite amplifier WA, and the MOS transistors 141 and 142 of the mainamplifier MA, whereby their threshold voltages are made high, while thebit line precharge voltage Vb1Hold is set low. It is thus possible toachieve a reduction in standby current. Upon reading, the high voltage(power supply VDD on the high potential side) is supplied to the bitlines BLT and BLB selected in accordance with the column select signalYs via the nodes IT and IB to thereby raise the precharge levels of thebit lines, thus making it possible to read the data from the 4T cell 300at high speed.

Even upon writing data into the 4T cell 300, high voltage (power supplyVDD on the high potential side) is similarly supplied to the bit linesBLT and BLB via the nodes IT and IB to thereby raise the prechargelevels of the bit lines, thus making it possible to achieve a speedingup of the data writing.

While the invention developed above by the present inventors has beendescribed specifically with reference to the illustrated embodiments,the present invention is not limited to these embodiments. It isneedless to say that various changes can be made thereto within a scopenot departing from the substance thereof.

For instance, an FRAM (Ferroelectric RAM) area may be provided in placeof the DRAM cell area 19 shown in FIG. 1. Nonvolatile memory cells, eachhaving a ferroelectric film used in a capacitor for data retention, maybe laid out in the FRAM area.

The main amplifier MA, the write amplifier WA, the column selectioncircuit 110, etc. shown in FIG. 11 can be applied to the mixedsemiconductor memory device shown in FIG. 1.

While the above description has principally been directed to the case inwhich the invention made by the present inventors is applied to asemiconductor integrated circuit including an SRAM macro, which belongsto the field of application extending to the background of theinvention, the present invention is not limited thereto, but can bewidely applied to various semiconductor integrated circuits.

The present invention can be applied on the condition that at least thebit lines are included.

Advantageous effects obtained by a representative aspect of theinvention disclosed in the present application will be described inbrief as follows:

When a memory cell comprises first, second, third and fourthtransistors, the third and fourth transistors are configured as avertical structure, the third transistor is laminated over the firsttransistor, and the fourth transistor is laminated over the secondtransistor, whereby a reduction in cell area can be achieved. A voltage,which is set on the condition that the difference between a sourcepotential applied to each of the first and second transistors and aselect level of a word line is greater than or equal to a thresholdvoltage of each of the third and fourth transistors, is supplied to eachof source electrodes of the first and second transistors, thereby toprovide “0” write compensation, whereby the appropriateness of writingof a logical value “0” is achieved. High voltage precharge meansperforms precharge at a voltage higher than a precharge voltage from thebit line precharge circuit to thereby make it possible to achieve areduction in standby current and a speeding up of reading and writing.

1. A semiconductor memory device comprising: a memory cell provided at apoint where a word line and bit lines intersect; a column selectionswitch for selectively connecting the bit lines to a data line; a bitline precharge circuit for precharging each of the bit lines to apredetermined level; high voltage precharge means for precharging a bitline selected by the column selection switch at a voltage of a levelhigher than a precharge voltage outputted by the bit line prechargecircuit; a write amplifier connected to the bit lines via the columnselection switch and which is for writing data into the correspondingmemory cell through the bit line selected by the column selectionswitch, said write amplifier including the high voltage precharge means;and wherein the memory cell includes a storage section comprising an nchannel type first MOS transistor and an n channel type second MOStransistor connected to each other, a p channel type third MOStransistor which is for connecting a drain electrode of the first MOStransistor and a gate electrode of the second MOS transistor to a firstbit line, and a p channel type fourth MOS transistor which is forconnecting a drain electrode of the second MOS transistor and a gateelectrode of the first MOS transistor to the first bit line.
 2. Thesemiconductor memory device according to claim 1, wherein the third andfourth MOS transistors are configured as a vertical structure, the thirdMOS transistor is laminated over the first MOS transistor, and thefourth MOS transistor is laminated over the second MOS transistor. 3.The semiconductor memory device according to claim 2 further including apower supply circuit which is for supplying a voltage, which is set onthe condition that a difference between a source potential applied toeach of the first and second MOS transistors and a potential of a selectlevel of the word line becomes greater than or equal to a thresholdvoltage of each of the third and fourth MOS transistors, to a sourceelectrode of each of the first and second MOS transistors.
 4. Thesemiconductor memory device according to claim 3, wherein each of thethird and fourth MOS transistors is set so as to retain data on the highlevel side in the storage section in a state in which a potentialopposite in polarity to a potential for turning on a channel is beingapplied between a gate and source thereof.
 5. The semiconductor memorydevice according to claim 1, further including a power supply circuitwhich is for supplying a voltage, which is set on the condition that adifference between a source potential applied to each of the first andsecond MOS transistors and a potential of a select level of the wordline becomes greater than or equal to a threshold voltage of each of thethird and fourth MOS transistors, to a source electrode of each of thefirst and second MOS transistors.
 6. The semiconductor memory deviceaccording to claim 5, wherein each of the third and fourth MOStransistors is set so as to retain data on the high level side in thestorage section in a state in which a potential opposite in polarity toa potential for turning on a channel is being applied between a gate andsource thereof.
 7. A semiconductor memory device comprising: a memorycell provided at a point where a word line and bit lines intersect; acolumn selection switch for selectively connecting the bit lines to adata line; a bit line precharge circuit for precharging each of the bitlines to a predetermined level; and high voltage precharge means forprecharging a bit line selected by the column selection switch at avoltage of a level higher than a precharge voltage outputted by the bitline precharge circuit; and wherein the memory cell includes a storagesection comprising an n channel type first MOS transistor and an nchannel type second MOS transistor connected to each other; a p channeltype third MOS transistor which is for connecting a drain electrode ofthe first MOS transistor and a gate electrode of the second MOStransistor to a first bit line; and a p channel type fourth MOStransistor which is for connecting a drain electrode of the second MOStransistor and a gate electrode of the first MOS transistor to the firstbit line, and wherein the third and fourth MOS transistors areconfigured as a vertical structure, the third MOS transistor islaminated over the first MOS transistor, and the fourth MOS transistoris laminated over the second MOS transistor.
 8. The semiconductor memorydevice according to claim 7, further including a power supply circuitwhich is for supplying a voltage, which is set on the condition that adifference between a source potential applied to each of the first andsecond MOS transistors and a potential of a select level of the wordline becomes greater than or equal to a threshold voltage of each of thethird and fourth MOS transistors, to a source electrode of each of thefirst and second MOS transistors.
 9. The semiconductor memory deviceaccording to claim 8, wherein each of the third and fourth MOStransistors is set so as to retain data on the high level side in thestorage section in a state in which a potential opposite in polarity toa potential for turning on a channel is being applied between a gate andsource thereof.